044 209 91 25 079 869 90 44
Notepad
The notepad is empty.
The basket is empty.
Free shipping possible
Free shipping possible
Please wait - the print view of the page is being prepared.
The print dialogue opens as soon as the page has been completely loaded.
If the print preview is incomplete, please close it and select "Print again".
CMOS Past, Present and Future
ISBN/GTIN

CMOS Past, Present and Future

E-bookEPUBDRM AdobeE-book
Ranking86230inTechnik
CHF238.65

Description

CMOS Past, Present and Future provides insight from the basics, to the state-of-the-art of CMOS processing and electrical characterization, including the integration of Group IV semiconductors-based photonics. The book goes into the pitfalls and opportunities associated with the use of hetero-epitaxy on silicon with strain engineering and the integration of photonics and high-mobility channels on a silicon platform. It begins with the basic definitions and equations, but extends to present technologies and challenges, creating a roadmap on the origins of the technology and its evolution to the present, along with a vision for future trends.

The book examines the challenges and opportunities that materials beyond silicon provide, including a close look at high-k materials and metal gate, strain engineering, channel material and mobility, and contacts. The book's key approach is on characterizations, device processing and electrical measurements.
Addresses challenges and opportunities for the use of CMOS
Covers the latest methods of strain engineering, materials integration to increase mobility, nano-scaled transistor processing, and integration of CMOS with photonic components
Provides a look at the evolution of CMOS technology, including the origins of the technology, current status and future possibilities
More descriptions

Details

Additional ISBN/GTIN9780081021408
Product TypeE-book
BindingE-book
FormatEPUB
Format noteDRM Adobe
Publishing date03/04/2018
Pages278 pages
LanguageEnglish
File size28905 Kbytes
Article no.9803387
CatalogsVC
Data source no.4114836
Product groupTechnik
More details

Author

Henry H. Radamson received an M.Sc. degree in physics and the Ph.D. degree in semiconductor materials from Linköping University in Sweden, in 1989 and 1996, respectively. In 1997, he joined the Royal Institute of Technology in Stockholm as a senior scientist, where he has been an Associate Professor since 2001.